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| - Ordering Information BVDSS / BVDGS 200V 240V ETE - OBSOL Order Number / Package TO-39 TN0520N2 -- TO-92 TN0520N3 TN0524N3 TN0520 TN0524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs RDS(ON) (max) 10 10 ID(ON) (min) 300mA 300mA VGS(th) (max) 1.5V 1.5V Die TN0520ND TN0524ND MIL visual screening available 7 Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Features Low threshold --1.5V max. High input impedance Low input capacitance -- 45pF typical Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-39 BVDSS BVDGS 20V -55C to +150C 300C DGS SGD TO-39 Case: DRAIN TO-92 Note: See Package Outline section for dimensions. TN0520/TN0524 Thermal Characteristics Package TO-39 TO-92 ID (continuous)* 0.7A 0.3A ID (pulsed) 1.5A 1.0A Power Dissipation @ TC = 25C 3.5W 1.0W jc ja IDR* 0.7A 0.3A IDRM 1.5A 1.0A C/W 35 125 C/W 125 170 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current TN0524 TN0520 Min 240 200 0.6 -3.0 1.5 -4.0 100 10 500 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.15 100 300 360 850 9.0 7.0 0.9 0.35 45 15 3.0 3.0 3.0 5.0 3.0 1.1 400 60 35 8.0 5.0 5.0 10 9.0 2.5 V ns VGS = 0V, ISD = 100mA VGS = 0V, ISD = 100mA ns VDD = 25V ID = 0.3A RGEN = 25 pF VGS = 0V, VDS = 25V f = 1 MHz 15 10 1.5 %/C A mA V mV/C nA Typ Max Unit V Conditions VGS= 0V, ID =1mA VGS = VDS, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VDS = 0V, VGS = 0.8 Max Rating TA = 125C VGS = 3V, VDS = 25V VGS = 5V, VDS = 25V VGS = 3V, ID = 50mA VGS = 5V, ID = 100mA VGS = 5V, ID = 100mA VDS = 25V, ID = 0.2A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V - tF ETE - OBSOL VDD RL 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 7-40 OUTPUT D.U.T. TN0520/TN0524 Typical Performance Curves Output Characteristics 2.0 LETE - OBSO - 1.0 0.8 VGS = 10V 6V Saturation Characteristics VGS = 10V 1.6 6V ID (amperes) 4V 0.8 ID (amperes) 1.2 0.6 0.4 4V 0.4 2V 0 0 20 40 60 80 100 0 0 2 4 6 8 10 0.2 2V VDS (volts) Transconductance vs. Drain Current 0.5 5 VDS (volts) Power Dissipation vs. Case Temperature 7 0.4 TA = -55C 4 TO-39 GFS (siemens) 0.2 PD (watts) 0.3 TA = 25C 3 TA = 150C 2 TO-92 0.1 VDS = 25V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 25 50 75 100 125 150 1 ID (amperes) Maximum Rated Safe Operating Area 1.0 TO-92 (pulsed) 1.0 TC ( C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 TO-39 PD = 3.5W Tvv = 25C TO-39 (DC) ID (amperes) 0.1 TO-92 (DC) 0.6 0.4 0.01 TC = 25C 0.2 TO-92 P D = 1W T C = 25C 0.01 0.1 1.0 10 0.001 1 10 100 1000 0 0.001 VDS (volts) tp (seconds) 7-41 Typical Performance Curves BVDSS Variation with Temperature 1.20 LETE - OBSO - On-Resistance vs. Drain Current 20 TN0520/TN0524 V GS = 3V 1.14 16 BVDSS (normalized) RDS(ON) (ohms) VGS = 5V 12 1.08 1.02 8 0.96 4 0.90 -50 0 50 100 150 0 0 0.2 0.4 0.6 0.8 1.0 Tj ( C) Transfer Characteristics 1.5 ID (amperes) V(th) and RDS Variation with Temperature 2.4 VDS = 25V 1.2 TA = 25 C 1.6 2.0 TA = -55 C VGS(th) (normalized) 1.4 R DS(ON) @ 5V, 0.1A 1.6 0.9 TA =125 C 0.6 1.2 V(th) @ 1.0mA 1.2 1.0 0.8 0.8 0.3 0 0 2 4 6 8 10 -50 0 50 100 150 0 0.4 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj ( C) Gate Drive Dynamic Characteristics f = 1MHz 8 75 VDS = 10V VDS = 40V C (picofarads) VGS (volts) 6 50 CISS 125 pF 4 25 COSS CRSS 0 0 10 20 30 40 2 50pF 0 0 0.4 0.8 1.2 1.6 2 VDS (volts) QG (nanocoulombs) 7-42 RDS(ON) (normalized) ID (amperes) |
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